gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 1 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. features ?? gan depletion mode hemt microwave transistor ?? common source configuration ?? broadband class ab operation ?? thermally enhanced cu/mo/cu package ?? rohs compliant ?? +50v typical operation ?? mttf of 600 years (channel temperature < 200c) application ?? civilian and military pulsed radar product description the magx-002735-040l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military radar pulsed applications between 2700 - 3500 mhz. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today?s demanding application needs. the magx-002735-040l00 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. typical rf performance freq (mhz) pin (w peak) pout (w peak) gain (db) id-pk (a) eff (%) 2700 4 44 10.4 1.7 53 3100 4 46 10.6 1.7 54 3500 4 42 10.2 1.5 55 2900 4 44 10.5 1.6 56 2800 4 45 10.5 1.7 53 3000 4 43 10.3 1.7 51 3400 4 43 10.3 1.5 55 3300 4 47 10.7 1.7 57 3200 4 47 10.7 1.7 54 typical rf performance measured in m/a-com rf test fixture. devices tested in common source class-ab configuration as follows: vdd=50v, idq=250ma (pulsed), f=2.7?3.5 ghz, pulse=300us, duty=10%. ordering information magx-002735-040l00 40w gan power transistor MAGX-002735-SB0PPR evaluation fixture
gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 2 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. absolute maximum ratings table (1, 2, 3) supply voltage (vdd) +65v supply voltage (vgg) -8 to 0v supply current (id1) 3 a input power (pin) +36 dbm absolute max. junction/channel temp 200 oc continuous power dissipati on (pdiss) at 85 oc 27 w pulsed power dissipation (pavg) at 85 oc 55 w thermal resistance, (tchannel = 200 oc) pulsed 500us, 10% duty cycle 2.0 oc/w operating temp -40 to +95c storage temp -65 to +150c mounting temperature see solder reflow profile esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v msl level msl1 (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's m ttf. channel temperature should be kept as low as possible to maximize lifetime. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175 mttf (t j <200c) 600 years parameter test conditions symbol min typ max units dc characteristics drain-source leakage current v gs = -8v, v ds = 175v i ds - - 2.5 ma gate threshold voltage v ds = 5v, i d = 6ma v gs (th) -5 -3 -2 v forward transconductance v ds = 5v, i d = 1.5ma g m 1.0 - - s dynamic characteristics input capacitance v ds = 0v, v gs = -8v, f = 1mhz c iss - 13.2 - pf output capacitance v ds = 50v, v gs = -8v, f = 1mhz c oss - 5.6 - pf reverse transfer capacitance v ds = 50v, v gs = -8v, f = 1mhz c rss - 0.5 - pf
gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 3 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance parameter test conditions symbol min typ max units output power pin = 4w peak p out 36 3.6 44 4.4 - w peak w ave power gain pin = 4w peak g p 9.5 10.5 - db drain efficiency pin = 4w peak d 48 55 - % load mismatch stability pin = 4w peak vswr-s 5:1 - - - load mismatch tolerance pin = 4w peak vswr-t 10:1 - - - f (mhz) z if ( ? ) z of ( ? ) 2700 9.2+ j2.1 7.5 + j8.9 2800 9.0 + j1.5 7.9 + j8.9 2900 8.7 + j0.8 8.2 + j8.5 3000 8.3 + j0.1 8.3 + j8.3 3100 7.8 - j0.7 8.2 + j8.4 3200 7.0 - j1.5 9.1 + j8.3 3300 6.0 - j2.0 9.4 + j7.2 3400 4.9 - j2.1 9.4 + j7.2 3500 4.2 - j2.7 9.0 + j6.8
gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 4 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed.
gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 5 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed.
gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 6 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. test fixture assembly
gan hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology so lutions and its affiliates reserve the right to make changes to the product(s) or information cont ained herein wi thout notice. 7 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. outline drawings outline drawings turning the device on 1. set v gs to the pinch-off (v p ), typically -5v 2. turn on v ds to nominal voltage (50v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device sequencing
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